PART |
Description |
Maker |
STP10NK60Z/FP |
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
|
意法半导
|
STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
|
STMicroelectronics
|
10N60KG-TF3-T 10N60KL-TF3-T |
10A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
STGP10NB60S |
N-CHANNEL 10A - 600V TO-220 POWERMESH IGBT
|
ST Microelectronics
|
STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB From old datasheet system N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STGB10NC60KDT4 STGP10NC60KD STGF10NC60KD GB10NC60K |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
STB10NK60ZT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 10A条(丁)|63AB
|
STMicroelectronics N.V.
|
IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
STW11NB80 6750 |
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET From old datasheet system N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
STD11NM60N-1 STP11NM60N STF11NM60N D11NM60N F11NM6 |
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET N沟道600V.37ohm - 10A条至22020FP -像是iPak - DPAK封装第二代MDmesh功率MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|